Semiconductor apparatus having fluorine containing region formed in recessed portion of semiconductor layer

摘要

A semiconductor apparatus includes a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a gate recess formed by removing at least a portion of the second semiconductor layer, an insulation film formed on the gate recess and the second semiconductor layer, a gate electrode formed on the gate recess via the insulation film, source and drain electrodes formed on one of the first and the second semiconductor layers, and a fluorine containing region formed in at least one of a part of the first semiconductor layer corresponding to a region in which the gate recess is formed and a part of the second semiconductor layer corresponding to the region in which the gate recess is formed.

主权项

1. A semiconductor apparatus comprising:
a first semiconductor layer formed on a substrate; a second semiconductor layer formed on the first semiconductor layer; a gate recess formed by removing at least a portion of the second semiconductor layer; an insulation film formed on the gate recess and the second semiconductor layer; a gate electrode formed on the gate recess via the insulation film; source and drain electrodes formed on one of the first and the second semiconductor layers; and a fluorine containing region formed in at least one of a part of the first semiconductor layer corresponding to a region in which the gate recess is formed and a part of the second semiconductor layer corresponding to the region in which the gate recess is formed; wherein the first semiconductor layer is an electron transit layer, and the second semiconductor layer is an electron supply layer.