Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film

摘要

A magnetic memory includes: a magnetization fixed layer having perpendicular magnetic anisotropy, a magnetization direction of the magnetization fixed layer being fixed; an interlayer dielectric; an underlayer formed on upper faces of the magnetization fixed layer and the interlayer dielectric; and a data recording layer formed on an upper face of the underlayer and having perpendicular magnetic anisotropy. The underlayer includes: a first magnetic underlayer; and a non-magnetic underlayer formed on the first magnetic underlayer. The first magnetic underlayer is formed with such a thickness that the first magnetic underlayer does not exhibit in-plane magnetic anisotropy in a portion of the first magnetic underlayer formed on the interlayer dielectric.

主权项

1. A magnetic memory, comprising:
a magnetization fixed layer having perpendicular magnetic anisotropy, a magnetization direction of said magnetization fixed layer being fixed; an amorphous interlayer dielectric; an underlayer formed on upper faces of said magnetization fixed layer and said interlayer dielectric; and a data recording layer formed on an upper face of said underlayer and having perpendicular magnetic anisotropy, wherein said underlayer includes:
a first underlayer formed in contact with the upper faces of said interlayer dielectric and said magnetization fixed layer; anda second underlayer formed on said first underlayer, wherein said second underlayer is non-magnetic, and wherein said first underlayer intrinsically exhibits ferromagnetism, while said first underlayer is formed with such a thickness that said first underlayer does not exhibit ferromagnetism in a portion of said first underlayer formed on said interlayer dielectric.