发明名称 |
Method for producing semiconductor device and semiconductor device |
摘要 |
A method for producing a semiconductor device includes forming a fin-shaped silicon layer, a first insulating film around the fin-shaped silicon layer, a pillar-shaped silicon layer on the fin-shaped silicon layer, a gate electrode and a gate insulating film around the pillar-shaped silicon layer, a gate line connected to the gate electrode, a first diffusion layer in an upper portion of the pillar-shaped silicon layer, a second diffusion layer in a lower portion of the pillar-shaped silicon layer and an upper portion of the fin-shaped silicon layer, and a first silicide and a second silicide on the first diffusion layer and the second diffusion layer; an interlayer insulating film to expose an upper portion of the pillar-shaped silicon layer; etching the interlayer insulating film to form a contact hole; depositing a metal to form the first contact on the second silicide; and performing etching to form the metal wire. |
申请公布号 |
US8829619(B2) |
申请公布日期 |
2014.09.09 |
申请号 |
US201314044501 |
申请日期 |
2013.10.02 |
申请人 |
Unisantis Electronics Singapore Pte. Ltd. |
发明人 |
Masuoka Fujio;Nakamura Hiroki |
分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
Brinks Gilson & Lione |
代理人 |
Brinks Gilson & Lione |
主权项 |
1. A method for producing a semiconductor device, the method comprising:
a first step of forming a fin-shaped silicon layer on a silicon substrate, forming a first insulating film around the fin-shaped silicon layer, and forming a pillar-shaped silicon layer in an upper portion of the fin-shaped silicon layer; a second step of forming a gate insulating film around the pillar-shaped silicon layer, a gate electrode around the gate insulating film, and a gate line connected to the gate electrode; a third step of forming a first diffusion layer in an upper portion of the pillar-shaped silicon layer and a second diffusion layer in a lower portion of the pillar-shaped silicon layer and an upper portion of the fin-shaped silicon layer; a fourth step of forming a first silicide and a second silicide on the first diffusion layer and the second diffusion layer; and after the fourth step, a fifth step of depositing an interlayer insulating film, planarizing and etching-back the interlayer insulating film to expose an upper portion of the pillar-shaped silicon layer, forming a fifth resist for forming a first contact after the upper portion of the pillar-shaped silicon layer is exposed, etching the interlayer insulating film to form a contact hole, depositing a metal to form the first contact on the second silicide, forming a sixth resist for forming a metal wire, and performing the etching to form the metal wire. |
地址 |
Peninsula Plaza SG |