| 发明名称 | Three-dimensional semiconductor memory device | ||
| 摘要 | A three-dimensional semiconductor memory device may include gap-fill insulating layers extending upward from a substrate, an electrode structure delimited by sidewalls of the gap-fill insulating layers, vertical structures provided between adjacent ones of the gap-fill insulating layers to penetrate the electrode structure, and at least one separation pattern extending along the gap-fill insulating layers and penetrating at least a portion of the electrode structure. The separation pattern may include at least one separation semiconductor layer. | ||
| 申请公布号 | US8829589(B2) | 申请公布日期 | 2014.09.09 |
| 申请号 | US201313757273 | 申请日期 | 2013.02.01 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Lee Changhyun;Son Byoungkeun;Park Youngwoo |
| 分类号 | H01L29/788;H01L29/04;H01L29/792 | 主分类号 | H01L29/788 |
| 代理机构 | F.Chau & Associates, LLC | 代理人 | F.Chau & Associates, LLC |
| 主权项 | 1. A three-dimensional (3D) semiconductor device, comprising: gap-fill insulating layers extending upward from a substrate; an electrode structure delimited by sidewalls of the gap-fill insulating layers; vertical structures provided between adjacent ones of the gap-fill insulating layers to penetrate the electrode structure; and at least one separation pattern extending substantially in parallel with the gap-fill insulating layers and penetrating at least a portion of the electrode structure, wherein the at least one separation pattern comprises at least one separation semiconductor layer. | ||
| 地址 | Suwon-si, Gyeonggi-do KR | ||