发明名称 Light emitting package and methods of fabricating the same
摘要 Example embodiments are directed to a light emitting package having a structure that prevents variance in a depth of a cavity in which a chip is mounted and a method of fabricating the same. A light emitting package includes a package body including a first body including the cavity and a second body bonded to the first body. The cavity penetrates the first body. A first electrode and a second electrode separate from each other are on the package body. A first dielectric layer is between the package body and the first electrode and between the package body and the second electrode. A light emitting element is placed in the cavity and electrically connected to the first electrode and the second electrode. A method of fabricating the light emitting package includes forming the first body and the second body bonded to the first body through a dielectric layer, forming the cavity in the first body and forming the light emitting element in the cavity.
申请公布号 US8829553(B2) 申请公布日期 2014.09.09
申请号 US201012805085 申请日期 2010.07.12
申请人 Samsung Electronics Co., Ltd. 发明人 Kim Yu-Sik
分类号 H01L33/00 主分类号 H01L33/00
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. A light emitting package comprising: a package body including a first body and a second body bonded to the first body, the first body including a cavity; a first electrode and a second electrode on the package body, the first electrode and the second electrode being separate from each other, the first electrode and the second electrode covering an upper surface of the first body and a bottom surface of the second body; a first dielectric layer between the package body and the first electrode and between the package body and the second electrode; a light emitting element in the cavity and electrically connected to the first electrode and the second electrode, wherein the second body is doped with impurities of a first type and further includes at least two impurity regions including impurities of a second type, the at least two impurity regions connected to the first electrode and the second electrode through the first dielectric layer; and a second dielectric layer between the first body and the second body.
地址 Gyeonggi-Do KR
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