Transistor having sulfur-doped zinc oxynitride channel layer and method of manufacturing the same

摘要

Transistors having sulfur-doped zinc oxynitride channel layers, and methods of manufacturing the same, include a ZnON channel layer with sulfur content ratio with respect to a zinc content of from about 0.1 at % to about 1.2 at %, a source electrode and a drain electrode respectively formed on a first region and a second region of the channel layer, a gate electrode corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate electrode.

主权项

1. A transistor, comprising:
a ZnON channel layer with a sulfur (S) content ratio with respect to zinc (Zn) content of from about 0.1 at % to about 1.2 at %; a source electrode and a drain electrode respectively on a first region and a second region of the ZnON channel layer; a gate electrode corresponding to the channel layer; and a gate insulation layer between the ZnON channel layer and the gate electrode.