Variable impedance memory device structure and method of manufacture including programmable impedance memory cells and methods of forming the same

摘要

A programmable impedance memory device structure can include a multi-layer variable impedance memory element formed on a planar surface of a first barrier layer, the multi-layer variable impedance memory element comprising a plurality of layers substantially parallel to the planar surface, including a memory material layer in contact with the planar surface, the first barrier layer being formed above a first insulating layer; and a second barrier layer formed over the memory element having a top surface substantially parallel with the planar surface. The first and second barrier layers can have lower mobility rates for at least one element within the memory material layer than the first insulating layer, and the memory material layer can be programmable by application of an electrical field between at least two different impedance states.

主权项

1. A programmable impedance memory device structure, comprising:
a multi-layer variable impedance memory element formed on a planar surface of a first barrier layer, the multi-layer variable impedance memory element comprising a plurality of layers substantially parallel to the planar surface throughout the memory element, and including a memory material layer in physical contact with the planar surface of the first barrier layer, the first barrier layer being formed above and in physical contact with a first insulating layer; and a second barrier layer formed over the memory element having a top surface substantially parallel with the planar surface of the first barrier layer; wherein the first and second barrier layers have lower mobility rates for at least one element within the memory material layer than the first insulating layer, the memory material layer is programmable by application of an electrical field between at least two different impedance states, and the first insulating layer is formed from a different material than the first barrier layer.