| 发明名称 | Magnetic memory | ||
| 摘要 | A magnetic memory according to an embodiment includes: a magnetic structure extending in a first direction and having a circular ring-like shape in cross-section in a plane perpendicular to the first direction; a nonmagnetic layer formed on an outer surface of the magnetic structure, the outer surface extending in the first direction; and at least one reference portion formed on part of a surface of the nonmagnetic layer, the surface being on the opposite side from the magnetic structure, the at least one reference portion containing a magnetic material. | ||
| 申请公布号 | US8830742(B2) | 申请公布日期 | 2014.09.09 |
| 申请号 | US201213713482 | 申请日期 | 2012.12.13 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Kondo Tsuyoshi;Morise Hirofumi;Nakamura Shiho |
| 分类号 | G11C11/15;G11C11/10;G11C11/02;G11C11/16;G11C11/06;G11C11/155 | 主分类号 | G11C11/15 |
| 代理机构 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A magnetic memory comprising: a magnetic structure extending in a first direction and having a circular ring-like shape in cross-section in a plane perpendicular to the first direction; a nonmagnetic layer formed on an outer surface of the magnetic structure, the outer surface extending in the first direction; and at least one reference portion formed on part of a surface of the nonmagnetic layer, the surface being on the opposite side from the magnetic structure, the at least one reference portion containing a magnetic material. | ||
| 地址 | Tokyo JP | ||