Power semiconductor device and method for manufacturing such a power semiconductor device

摘要

An insulated gate bipolar device is disclosed which can include layers of different conductivity types between an emitter electrode on an emitter side and a collector electrode on a collector side in the following order: a source region of a first conductivity type, a base layer of a second conductivity type, which contacts the emitter electrode in a contact area, an enhancement layer of the first conductivity type, a floating compensation layer of the second conductivity type having a compensation layer thickness tp, a drift layer of the first conductivity type having lower doping concentration than the enhancement layer and a collector layer of the second conductivity type.

主权项

1. An insulated gate bipolar device with a gate electrode, the gate electrode being arranged on an emitter side, which device comprises:
an active cell with layers of different conductivity types in an order between an emitter electrode on the emitter side and a collector electrode on a collector side opposite to the emitter side as follows:
a source region of a first conductivity type;a base layer of a second conductivity type, which contacts the emitter electrode in a contact area;an enhancement layer of the first conductivity type having high doping concentration;a compensation layer of the second conductivity type arranged between the enhancement layer and a drift layer, which has a compensation layer thickness tp, which is a maximum thickness of the compensation layer in a plane perpendicular to the emitter side;the drift layer of the first conductivity type having lower doping concentration than the enhancement layer, wherein the enhancement layer separates the base layer from the drift layer; anda collector layer of the second conductivity type;wherein the compensation layer is arranged in a projection of the contact area between the enhancement layer and the drift layer, such that a channel between the enhancement layer and the drift layer is maintained;wherein the compensation layer floats relative to the base layer such that the compensation layer does not extend into an area outside the projection of the contact area; andwherein the enhancement layer has an enhancement layer thickness tn, which is measured in a same plane as the compensation layer thickness, with:
Nptp=kNntn,wherein Nn is a doping concentration of the enhancement layer;wherein Np is the doping concentration of the compensation layer; andwherein k is a factor between 0.67 and 1.5.