Backside illumination (BSI) CMOS image sensor process

摘要

A backside illumination (BSI) CMOS image sensing process includes the following steps. A substrate having an active side is provided. A curving process is performed to curve the active side. A reflective layer is formed on the active side, so that at least a curved mirror is formed on the active side.

主权项

1. A backside illumination (BSI) CMOS image sensing process, comprising:
providing a substrate having an active side; performing a curving process to curve the active side, wherein steps of performing the curving process comprise etching the substrate from the active side to form a plurality of recesses in the substrate; and performing an annealing process to curve the active side between each of the recesses; filling an isolating material into each of the recesses after the annealing process is performed; and forming a reflective layer on the active side, thereby forming at least a curved mirror on the active side.