发明名称 |
Electronic synapses from stochastic binary memory devices |
摘要 |
According to a technique, an electronic device is configured to correspond to characteristic features of a biological synapse. The electronic device includes multiple bipolar resistors arranged in parallel to form an electronic synapse, an axonal connection connected to one end of the electronic synapse and to a first electronic neuron, and a dendritic connection connected to another end of the electronic synapse and to a second electronic neuron. An increase and decrease of synaptic conduction in the electronic synapse is based on a probability of switching the plurality of bipolar resistors between a low resistance state and a high resistance state. |
申请公布号 |
US8832010(B2) |
申请公布日期 |
2014.09.09 |
申请号 |
US201213343371 |
申请日期 |
2012.01.04 |
申请人 |
International Business Machines Corporation |
发明人 |
Rajendran Bipin;Ritter Mark B. |
分类号 |
G06N3/04;G06N3/063 |
主分类号 |
G06N3/04 |
代理机构 |
Cantor Colburn LLP |
代理人 |
Cantor Colburn LLP ;Alexanian Vazken |
主权项 |
1. An electronic device configured to correspond to characteristic features of a biological synapse, the electronic device comprising:
a plurality of bipolar resistors arranged in parallel to form an electronic synapse, wherein the plurality of bipolar resistors each have a required switching voltage to switch from one state to another; an axon connection connected to one end of the electronic synapse and to a first electronic neuron; and a dendritic connection connected to another end of the electronic synapse and to a second electronic neuron; wherein the plurality of bipolar resistors each have voltages on the axon and dendritic connections that cause a resultant voltage below the required switching voltage for the plurality of bipolar resistors; and wherein an increase and decrease of synaptic conduction in the electronic synapse is based on an effective probability of switching the plurality of bipolar resistors between a low resistance state and a high resistance state; wherein the resultant voltage for each of the plurality of bipolar resistors is defined as a resultant waveform, in which a first part, being positive, of the resultant waveform corresponds to a first probability of switching to an on state and in which a second part, being negative, of the resultant waveform corresponds to a second probability of switching to an off state. |
地址 |
Armonk NY US |