Method for forming semiconductor layout patterns, semiconductor layout patterns, and semiconductor structure

摘要

A method for forming semiconductor layout patterns providing a pair of first layout patterns being symmetrical along an axial line, each of the first layout patterns comprising a first side proximal to the axial line and a second side far from the axial line; shifting a portion of the first layout patterns toward a direction opposite to the axial line to form at least a first shifted portion in each first layout pattern, and outputting the first layout patterns and the first shifted portions on a first mask.

主权项

1. A semiconductor structure comprising:
a pair of first diffusion regions formed on a substrate and being symmetrical along an axial line, each of the first diffusion regions comprising:
a plurality of first straight-lined portions; andat least a first curved portion formed in between the first straight-lined portions; and a pair of gate layers being symmetrical along the axial line and perpendicular to the first diffusion regions, the gate layers overlapping the first curved portions, respectively.