发明名称 Substrate for photoelectric conversion device and method of manufacturing the substrate, thin-film photoelectric conversion device and method of manufacturing the thin-film photoelectric conversion device, and solar cell module
摘要 This invention relates to a method of manufacturing a substrate for photoelectric conversion device including, on a substrate, a first electrode layer formed of a transparent conductive material. The method includes a first transparent conductive film forming step of forming a first transparent conductive film on the substrate, a second transparent conductive film forming step of forming a second transparent conductive film under a film forming condition that an etching rate is low compared with the first transparent conductive film at a later etching step, and an etching step of wet-etching the second and first transparent conductive films to form recesses that pierce through at least the second transparent conductive film, with the bottoms of the recesses being present in the first transparent conductive film.
申请公布号 US8828780(B2) 申请公布日期 2014.09.09
申请号 US201013639312 申请日期 2010.12.07
申请人 Mitsubishi Electric Corporation 发明人 Matsuura Tsutomu;Yamarin Hiroya;Tsuda Yuki
分类号 H01L21/00;H01L31/0236;H01L31/18;H01L31/0224 主分类号 H01L21/00
代理机构 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A method of manufacturing a substrate for a photoelectric conversion device, the method comprising: forming a first transparent conductive film on a substrate; forming a second transparent conductive film such that an etching rate is low compared with the first transparent conductive film at a later etching step; wet-etching the second and first transparent conductive films to form recesses that pierce through the second transparent conductive film, such that bottoms of the recesses are present in the first transparent conductive film; and at the forming of the first transparent conductive film, after forming a third transparent conductive film on the substrate such that an etching rate is low compared with the first transparent conductive film at the later etching step, the first transparent conductive film is formed on the third transparent conductive film; and at the wet etching, the recesses piercing through the second and first transparent conductive films are formed such that the third transparent conductive film is a stopper.
地址 Tokyo JP