发明名称 |
Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same |
摘要 |
A positive type resist composition for use in liquid immersion exposure comprises: (A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid; (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation; (C) an alkali soluble compound having an alkyl group of 5 or more carbon atoms; and (D) a solvent. |
申请公布号 |
US8828643(B2) |
申请公布日期 |
2014.09.09 |
申请号 |
US201313782148 |
申请日期 |
2013.03.01 |
申请人 |
FUJIFILM Corporation |
发明人 |
Kobayashi Hiromi;Inabe Haruki |
分类号 |
C07C69/54;H01L21/027 |
主分类号 |
C07C69/54 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A positive type resist composition for use in liquid immersion exposure comprising:
(A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid; (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation; (C) an alkali soluble resin having one or more fluorine atoms; and (D) a solvent, wherein the structure of resin (A) and the structure of resin (C) are not the same, the amount of the alkali soluble resin (C) is 1 to 10% by mass based on the total solid components in the resist composition, and the alkali soluble resin (C) contains an alkyl group having 1 to 10 carbon atoms substituted by at least one fluorine atom. |
地址 |
Tokyo JP |