Solid-state imaging device, electronic apparatus, and method for manufacturing the same

摘要

A solid-state imaging device includes photoelectric conversion elements on an imaging surface of a substrate, receiving light incident on a light receiving surface and performing photoelectric conversion to produce a signal charge. Electrodes are interposed between the photoelectric conversion elements and light blocking portions are provided above the electrodes and interposed between the photoelectric conversion elements. The light blocking portions include an electrode light blocking portion formed to cover the corresponding electrode, and a pixel isolation and light blocking portion protruding convexly from the upper surface of the electrode light blocking portion. The photoelectric conversion elements are arranged at first pitches on the imaging surface. The electrode light blocking portions and the pixel isolation and light blocking portions are arranged at second and third pitches on the imaging surface. At least the third pitch increases with distance from the center toward the periphery of the imaging surface.

主权项

1. A solid-state imaging device comprising:
a pixel area having a plurality of pixels on an imaging surface of a substrate, respective ones of the pixels including a photoelectric conversion element and an on-chip lens being disposed above the photoelectric conversion element; and a plurality of light blocking portions interposed between the photoelectric conversion elements arranged on the imaging surface, wherein the light blocking portions are configured such that a width between a pair of neighboring photoelectric conversion elements decreases with a distance from a center of the imaging surface toward a periphery of the imaging surface.