Solid-state imaging device

摘要

According to one embodiment, a solid-state imaging device includes a unit cell forming region in a pixel array of a semiconductor substrate, a pixel which is provided in the unit cell forming region and generates a signal charge based on a light signal, and an amplification transistor which is provided in the unit cell forming region and amplifies a potential associated with the signal charge transferred from the pixel to a floating diffusion. The amplification transistor includes a gate electrode having one or more first embedded portions embedded in one or more trenches in the semiconductor substrate through a first gate insulating film.

主权项

1. A solid-state imaging device comprising:
a unit cell forming region provided in a pixel array of a semiconductor substrate; a pixel which is provided in the unit cell forming region and generates a signal charge based on a light signal from a subject; an amplification transistor which is provided in the unit cell forming region and amplifies a potential associated with the signal charge transferred from the pixel to a floating diffusion, the amplification transistor including a gate electrode having one or more first embedded portions embedded in one or more first trenches in the semiconductor substrate through a first gate insulating film; and a transfer gate which is provided between the pixel and the floating diffusion in the unit cell forming region and controls transfer of the signal charge with respect to the floating diffusion, wherein the transfer gate includes a gate electrode having one or more second embedded portions, the one or more second embedded portions are embedded in one or more second trenches in the semiconductor substrate through a second gate insulating film, respectively, wherein, in the vertical direction with respect to the surface of the semiconductor substrate, a position of a bottom part of the one or more second embedded portions on the floating diffusion side is provided between a position of the bottom part of the one or more second embedded portions on the pixel side and the surface of the semiconductor substrate.