Semiconductor device and method for manufacturing the same

摘要

A semiconductor device and a method for manufacturing the same are disclosed. When forming a profile of the lower electrode, a second lower electrode hole (i.e., a bunker region) located at the lowermost part of the lower electrode is buried with an Ultra Low Temperature Oxide (ULTO) material without damaging the lower electrode material. As a result, when a dielectric film is deposited in a subsequent process, the above-mentioned semiconductor device prevents the occurrence of a capacitor leakage current caused by defective gapfilling of the dielectric film located at the lowermost part of the lower electrode.

主权项

1. A method for manufacturing a semiconductor device comprising:
forming a contact plug over a semiconductor substrate; forming a sacrificial insulation film over an upper surface of the semiconductor including the contact plug; forming a first lower electrode hole by etching the sacrificial insulation film until the contact plug is exposed; etching a sidewall of the contact plug to form a second lower electrode disposed at a lower surface of the first lower electrode hole; forming a conductive film over the first lower electrode hole and the second lower electrode hole to form a lower electrode coupled to the contact plug; forming an insulation film pattern to fill a bottom portion of the lower electrode including the second contact hole such that upper sidewalls of the lower electrode are exposed, wherein forming an insulation film pattern includes depositing an insulation film over the lower electrode to fill the second lower electrode hole; and forming a dielectric film over the lower electrode and the insulation film pattern.