Forming electrodes for chalcogenide containing devices

摘要

The electrode of a phase change memory may be formed with a mixture of metal and a non-metal, the electrode having less nitrogen atoms than metal atoms. Thus, in some embodiments, at least a portion of the electrode has less nitrogen than would be the case in a metal nitride. The mixture can include metal and nitrogen or metal and silicon, as two examples. Such material may have good adherence to chalcogenide with lower reactivity than may be the case with metal nitrides.

主权项

1. An apparatus comprising:
a first electrode and a second electrode; a chalcogenide layer between the first and second electrodes; and a first electrode layer thinner than the first electrode and disposed between the first electrode and the chalcogenide layer and a second electrode layer thinner than the second electrode and disposed between the second electrode and the chalcogenide layer, each of the first and second electrode layers including a mixture of a metal and nitrogen, wherein an atomic percentage of the nitrogen of the mixture of metal and nitrogen includes 30 to 40 atomic percent, wherein an atomic percent of the metal of the mixture of metal and nitrogen is 100 minus the atomic percentage of the nitrogen.