发明名称 |
PHOTODIODE, SOLID STATE IMAGE SENSOR, AND IMAGING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a photodiode capable of enlarging a dynamic range while suppressing reduction in sensitivity without increasing an occupancy area.SOLUTION: A photodiode PD includes: a first conductive type charge storage region 43 that stores electric charges generated according to incident light; a second conductive type first semiconductor region 44 that is partly provided immediately under the charge storage region 43; and a second conductive type second semiconductor region 42 that is provided immediately under the first semiconductor region 44 and whose impurity density is lower than that of the first semiconductor region 44. |
申请公布号 |
JP2014165286(A) |
申请公布日期 |
2014.09.08 |
申请号 |
JP20130033984 |
申请日期 |
2013.02.23 |
申请人 |
NIKON CORP |
发明人 |
NAKAYAMA SATOSHI |
分类号 |
H01L27/146;H01L31/10;H04N5/369;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|