发明名称 PHOTODIODE, SOLID STATE IMAGE SENSOR, AND IMAGING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a photodiode capable of enlarging a dynamic range while suppressing reduction in sensitivity without increasing an occupancy area.SOLUTION: A photodiode PD includes: a first conductive type charge storage region 43 that stores electric charges generated according to incident light; a second conductive type first semiconductor region 44 that is partly provided immediately under the charge storage region 43; and a second conductive type second semiconductor region 42 that is provided immediately under the first semiconductor region 44 and whose impurity density is lower than that of the first semiconductor region 44.
申请公布号 JP2014165286(A) 申请公布日期 2014.09.08
申请号 JP20130033984 申请日期 2013.02.23
申请人 NIKON CORP 发明人 NAKAYAMA SATOSHI
分类号 H01L27/146;H01L31/10;H04N5/369;H04N5/374 主分类号 H01L27/146
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