| 摘要 |
PROBLEM TO BE SOLVED: To provide a long wavelength surface-emitting laser which can be manufactured easily even by the MOCVD method, and can perform high speed modulation because the distance between an active layer and a metamorphic layer is short.SOLUTION: On an InP substrate 100 inclining by 7° from the (100) plane, 56 pairs of n-InAlGaAs(λg=1.2 μm)/InP layer are grown as a first reflector 101 lattice-matched to InP, by the MOCVD method. Subsequently, an n-InP layer 102 as a first spacer layer, an InAlGaAs/InAlGaAs compression strain active layer 103, a p-InP second spacer layer 104, and a tunnel junction layer, i.e., a heavily doped p-InAlGaAs/n-InGaAs layer 105 are grown. Finally, a metamorphic Si-doped n-type GaAs/AlGaAs layer are grown sequentially, to form a second reflector 106 non-lattice-matched to InP. |
