| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that since the wiring pattern of a lower layer appears on a hole bottom surface in a hole after etching on wiring, and the position on the hole surface fluctuates due to an inter-layer deviation between a wiring layer and a contact hole layer, a signal waveform fluctuates due to a change in the degree of overlapping of a wiring edge and a hole edge, and a regular state premised by a threshold method as a conventional method is not maintained, and stable measurement is impossible.SOLUTION: The semiconductor pattern measurement device includes: an imaging part for imaging a pattern formed on a semiconductor wafer; a signal waveform generation part for generating a signal waveform for measuring the width of the pattern; a hole edge detection range determination part for, on the basis of the local maximum value information of the signal waveform generated by the signal waveform generation part, determining a hole edge detection range on the signal waveform; and a display part for displaying information related to the hole edge detection range determined by the hole edge detection range determination part. |
