| 摘要 |
<p>A method and apparatus for vapor deposition employing a conductive, three- dimensional, open cell, reticulated structure having a solid coating of a material that was previously vapor deposited thereon. The solid coating is vaporized to form a deposition gas. A carrier gas is flowed though the three-dimensional, open cell, reticulated structure to yield a controllable partial pressure of the deposition gas thereby forming a mixture of the carrier gas and the deposition gas. The mixture is delivered at a stable flow rate to a temperature controlled substrate. The deposition gas condenses on the surface of the temperature controlled substrate.</p> |
