| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can decrease electrical resistance between a WLCSP (Wafer Level Chip Size Package) and a wiring board.SOLUTION: A semiconductor device manufacturing method comprises; a process of forming a columnar electrode which is installed in a standing manner in a thickness direction of a semiconductor chip and composed of copper or a copper alloy on a wiring part formed on one surface of a semiconductor substrate having the semiconductor chip, and forming an insulation layer on the semiconductor substrate so as to cover the wiring part and expose an electrode surface of the columnar electrode; a process of forming an oxide layer composed of a copper oxide (II) on the electrode surface of the columnar electrode; and a process of bonding the columnar electrode to a terminal part of the wiring board after making the electrode surface be a metal surface by reduction of the oxide layer when mounting a semiconductor device cut from the semiconductor substrate with respect to each semiconductor chip, on the wiring board.</p> |
