| 摘要 |
PROBLEM TO BE SOLVED: To reduce hot spots in OPC correction.SOLUTION: A mask pattern correction program comprises modifying the correction order of evaluation points on the basis of the possibility of occurrence of defects due to a light proximity effect by referring to an evaluation point setting pattern, stored in a storage portion, in which evaluation points for determination of light intensities to a mask pattern for transferring a circuit pattern to a substrate are set, calculating light intensities of the evaluation points according to the correction order and causing a computer to execute a processing for correcting the mask pattern on the basis of computation results of the light intensities. |
