| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a photoelectric conversion material, composed of a novel Cu-Zn-Sn (S, Se) based compound semiconductor, exhibiting an open end voltage higher than that of conventional ones, and a process of manufacturing the same.SOLUTION: The photoelectric conversion material is composed of a compound semiconductor containing Cu, Zn, Sn, and S and/or Se as main components and containing K of 0 atom % or more and 6 atom % or less. Such a photoelectric conversion material is obtained by producing a precursor containing at least Cu, Zn, Sn, and K and sulfurizing and/or selenizing the precursor.</p> |
