发明名称 THERMOELECTRIC TRANSDUCER
摘要 PROBLEM TO BE SOLVED: To suppress degradation over time of the power generation efficiency of a thermoelectric transducer used at a temperature of 500°C or more.SOLUTION: A thermoelectric transducer 6 for high working temperature of 500°C or more is provided. The transducer 6 includes a lamination structure having a plurality of p-type silicide substrates 1 and a plurality of n-type silicide substrates 2 laminated alternately, and an adhesive layer 13 composed of a cured product of inorganic adhesive composed of a blend of an inorganic binder and a filler, and bonding a p-type silicide substrate and an n-type silicide substrate adjacent in the lamination direction. The transducer 6 further includes electrodes 7A and 7B formed on the side face of the lamination structure 5, and electrically connecting the p-type silicide substrate and n-type silicide substrate in series. Thickness of the p-type silicide substrate and n-type silicide substrate ranges from 0.5 to 3 mm, thickness of the adhesive layer ranges from 0.5 to 2 mm, and coefficient of thermal expansion of the adhesive layer ranges from 7×10/°C to 16×10/°C.
申请公布号 JP2014165188(A) 申请公布日期 2014.09.08
申请号 JP20130032049 申请日期 2013.02.21
申请人 NGK INSULATORS LTD 发明人 KONDO JUNGO
分类号 H01L35/32;H01L35/14;H01L35/34 主分类号 H01L35/32
代理机构 代理人
主权项
地址