| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state image pickup device which can provide a global shutter structure while achieving a fine pixel.SOLUTION: A solid state image pickup device comprises pixels P each including a photoelectric conversion layer for performing photoelectric conversion and a charge storage layer for storing a charge subjected to photoelectric conversion, which are provided independently from each other, in which the photoelectric conversion layer is provided on a rear face side of a semiconductor substrate and the charge storage layer is provided on a surface side of the semiconductor substrate. The photoelectric conversion layer and the charge storage layer overlaps each other at least partially. |
