MONOMER, POLYMERIC COMPOUND, RESIST MATERIAL AND PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a monomer for a base resin of a photoresist material which is applicable to organic solvent development process and has a high dissolution contrast and high sensitivity, and to provide a polymeric compound obtained from the monomer, and a resist material comprising the polymeric compound as a base resin.SOLUTION: The polymeric compound is prepared by polymerizing a (meth)acrylate monomer having a specific structure which has, as a side chain, one or two ester structures connected through an alkyl chain via an ester bond. A negative photoresist composition is prepared by adding an acid generator to the polymeric compound. A photoresist film comprising a polymeric compound containing a repeating unit obtained from the monomer shows high solubility in an unexposed portion in a process of forming a positive-negative reversal image by organic solvent development.