METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve the performance of a semiconductor device.SOLUTION: A method of manufacturing a semiconductor device comprises: forming a metal film 4a on a semiconductor substrate 1 having an insulating film 3a formed on a surface; removing the metal film 4a in a memory cell region 1A and leaving the metal film 4a in a part of a peripheral circuit region 1B; forming a silicon film 4b on the semiconductor substrate 1; patterning the silicon film 4b in the memory cell region 1A and leaving the silicon film 4b in the peripheral circuit region 1B so that the periphery of the remaining metal film 4a is covered with the silicon film 4b; and patterning the silicon film 4b, the metal film 4a, and the insulating film 3a in the peripheral circuit region 1B to form an insulating film portion made of the insulating film 3a, a metal film portion made of the metal film 4a, and a conductive film portion made of the silicon film 4b.