| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve ESD resistance without increasing an area of p-n junction of a diode.SOLUTION: A semiconductor device of an embodiment comprises: a first conductivity type semiconductor substrate 1; a second conductivity type first semiconductor layer 2; a first conductivity type second semiconductor layer 3; a second conductivity type third semiconductor layer 4; a first electrode A; and a second electrode C. The second semiconductor layer 3 reaches from a surface of the first semiconductor layer 2 to the semiconductor substrate 1 and surrounds the first semiconductor layer 2. The third semiconductor layer 4 is selectively provided on a surface of the first semiconductor layer 2 surrounded by the second semiconductor layer 3 so as to depart from the second semiconductor layer. A withstand voltage between the semiconductor substrate and the third semiconductor layer is lower than a withstand voltage between the second semiconductor layer 3 and the third semiconductor layer 4.</p> |
