发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing the size of a semiconductor chip.SOLUTION: The semiconductor device includes: a semiconductor substrate 101; an MISFET 102 which is active elements formed on a first plane (surface) of the semiconductor substrate 101 and a multi-layered wiring layer 104; a pn diode 109 which is an active element formed on a second plane (rear face) of the semiconductor substrate 101 at the side opposite to the first plane; and a through electrode 108 which is formed through the semiconductor substrate 101 to electrically connect the pn diode 109 to the multi-layered wiring layer 104.</p> |
申请公布号 |
JP2014165358(A) |
申请公布日期 |
2014.09.08 |
申请号 |
JP20130035479 |
申请日期 |
2013.02.26 |
申请人 |
PANASONIC CORP |
发明人 |
HIGUCHI YUICHI |
分类号 |
H01L27/00;H01L21/3205;H01L21/329;H01L21/768;H01L21/822;H01L21/8234;H01L23/522;H01L27/04;H01L27/06;H01L29/861;H01L29/866;H01L29/868 |
主分类号 |
H01L27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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