发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing the size of a semiconductor chip.SOLUTION: The semiconductor device includes: a semiconductor substrate 101; an MISFET 102 which is active elements formed on a first plane (surface) of the semiconductor substrate 101 and a multi-layered wiring layer 104; a pn diode 109 which is an active element formed on a second plane (rear face) of the semiconductor substrate 101 at the side opposite to the first plane; and a through electrode 108 which is formed through the semiconductor substrate 101 to electrically connect the pn diode 109 to the multi-layered wiring layer 104.</p>
申请公布号 JP2014165358(A) 申请公布日期 2014.09.08
申请号 JP20130035479 申请日期 2013.02.26
申请人 PANASONIC CORP 发明人 HIGUCHI YUICHI
分类号 H01L27/00;H01L21/3205;H01L21/329;H01L21/768;H01L21/822;H01L21/8234;H01L23/522;H01L27/04;H01L27/06;H01L29/861;H01L29/866;H01L29/868 主分类号 H01L27/00
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