发明名称 PRODUCTION METHOD OF SAPPHIRE SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method for producing a sapphire single crystal having no foams, capable of suppressing increase of the impurity concentration of raw material molten liquid even when reuse of the raw material molten liquid is repeated, in production of a sapphire ingot by a Czochralski method.SOLUTION: A sapphire ingot is produced by a Czochralski method, and a shoulder part and a tail part of the sapphire ingot are cut off to obtain a core, and the cut-off shoulder part and tail part are used as a part of a production raw material of the sapphire ingot by the Czochralski method of another batch.
申请公布号 JP2014162698(A) 申请公布日期 2014.09.08
申请号 JP20130036816 申请日期 2013.02.27
申请人 TOKUYAMA CORP 发明人 MOCHIZUKI NAOTO;FUKUDA MASAYUKI;OGAWA KATSUYA
分类号 C30B29/20;C30B15/02 主分类号 C30B29/20
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