发明名称 METHOD FOR PURIFYING POLYCRYSTALLINE SILICON OBTAINED BY THE ZINC REDUCTION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method for purifying polycrystalline silicon capable of effectively abating or removing, from a polycrystalline silicon obtained by the zinc reduction method, various impurities such as granular quartz glass, boron-based impurities, metal impurities such as zinc, etc.SOLUTION: The method of the present invention for purifying polycrystalline silicon comprises: (A) a step of washing, with hydrochloric acid, an acicular or dendritic polycrystalline silicon manufactured by the zinc reduction method; (B) a step of washing, with water, the polycrystalline silicon washed at the step (A); (C) a step of drying the polycrystalline silicon washed at the step (B); (D) a step of washing, with hydrofluoric acid, the polycrystalline silicon dried at the step (C); (E) a step of washing, with water, the polycrystalline silicon washed at the step (D); and (F) a step of drying the polycrystalline silicon washed at the step (E).
申请公布号 JP2014162687(A) 申请公布日期 2014.09.08
申请号 JP20130035750 申请日期 2013.02.26
申请人 JNC CORP;JX NIPPON MINING & METALS CORP;TOHO TITANIUM CO LTD 发明人 TANAKA TORU;SATO KENJI;KAWAI TAKAHIRO
分类号 C01B33/037 主分类号 C01B33/037
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