发明名称 VAPOR DEPOSITION APPARATUS AND VAPOR DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus that can continuously measure a vapor deposition rate without putting the inside of a vacuum chamber back to atmospheric pressure, avoid a decrease in productivity, accurately find a flow rate of a vapor deposition material, and form a vapor deposition film at an accurate vapor deposition rate.SOLUTION: A vapor deposition device which sticks a vapor deposition material on a vapor deposition target member 12 in a vacuum chamber 13 includes: a flow rate control valve 18 which adjusts a flow rate of the vapor deposition material supplied from a vapor deposition source 19 to a guide path 17; a first pressure sensor 21 which detects the pressure in the vapor deposition source 19; a second pressure sensor 22 which detects the pressure in the vacuum chamber 13; and a controller 24. The controller 24 measures a rate of vapor deposition of the vapor deposition material on the vapor deposition target member 12 by finding the flow rate of the vapor deposition material based upon the difference between a value measured by the first pressure sensor 21 and a value measured by the second pressure sensor 22, and controls the opening of the flow rate control valve 18 so that the measured vapor deposition rate reaches a predetermined vapor deposition rate.
申请公布号 JP2014162969(A) 申请公布日期 2014.09.08
申请号 JP20130036511 申请日期 2013.02.27
申请人 HITACHI ZOSEN CORP 发明人 NODA TAKESHI;MATSUMOTO YUJI
分类号 C23C14/24;H01L51/50;H05B33/10 主分类号 C23C14/24
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