| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can reliably remove a projection structure generated on a surface of a metal wiring layer at the time of forming the metal wiring layer; and provide a semiconductor device from which the projection structure is removed.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming a metal wiring layer on a semiconductor substrate; forming on the metal wiring layer, a resist film having a thickness such that a part including a tip part of a projection structure formed on a surface of the metal wiring layer is exposed; removing the part of the projection structure, which is exposed from the resist firm, by etching; and partially etching the metal wiring layer after the above-described etching to form a wiring pattern on the metal wiring layer. |
