| 摘要 |
Disclosed is a light emitting device. The light emitting device comprises a reflective layer comprising an alloy of at least one of an Ag-based alloy, an Al-based alloy, Ag, Al, Rh, or Sn, and at least one of Pd, Cu, C, Sn, In or Cr, and a light emitting semiconductor layer comprising a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer on the reflective layer. |
