发明名称 Semiconductor light emitting device and fabrication method thereof
摘要 Embodiments provide a semiconductor light emitting device which comprises a light emitting structure comprising a plurality of compound semiconductor layers, an insulation layer on an outer surface of the light emitting structure, an ohmic layer under the light emitting structure and on an outer surface of the insulation layer, a first electrode layer on the light emitting structure, and a tunnel barrier layer between the first electrode layer and the ohmic layer.
申请公布号 KR101438811(B1) 申请公布日期 2014.09.05
申请号 KR20080000841 申请日期 2008.01.03
申请人 发明人
分类号 H01L33/02;H01L33/14;H01L33/38;H01L33/44 主分类号 H01L33/02
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