| 摘要 |
The method involves partially providing a non-doping atomic group such as fluorine, in a drain area and a source area (106) in a body area (107) of a silicon on insulator (SOI) transistor (110), which is formed over a substrate. The drain and the source areas are formed by implanting dopant types. The drain and the source areas are baked out in order to recrystallize crystal damage caused by implantation in the drain and the source areas, where the atomic group provides increased leakage current path of the body area in the drain and the source areas. An independent claim is also included for a semiconductor component comprising a substrate. |
