发明名称 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, METHOD OF PROCESSING A SUBSTRATE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS
摘要 <p>The present invention is to form a metal-containing film capable of adjusting a work function. A composite metal nitride film is formed on a high dielectric constant film by alternately supplying a first material including a first metal element and a halogen element and a second material including a second metal element different from the first metal element and an amino group, for a substrate in which the high dielectric constant film is formed.</p>
申请公布号 KR20140108160(A) 申请公布日期 2014.09.05
申请号 KR20140023242 申请日期 2014.02.27
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 HARADA KAZUHIRO;OGAWA ARITO;ASHIHARA HIROSHI
分类号 H01L21/31;H01L21/205 主分类号 H01L21/31
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