发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, METHOD OF PROCESSING A SUBSTRATE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
<p>The present invention is to form a metal-containing film capable of adjusting a work function. A composite metal nitride film is formed on a high dielectric constant film by alternately supplying a first material including a first metal element and a halogen element and a second material including a second metal element different from the first metal element and an amino group, for a substrate in which the high dielectric constant film is formed.</p> |
申请公布号 |
KR20140108160(A) |
申请公布日期 |
2014.09.05 |
申请号 |
KR20140023242 |
申请日期 |
2014.02.27 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
HARADA KAZUHIRO;OGAWA ARITO;ASHIHARA HIROSHI |
分类号 |
H01L21/31;H01L21/205 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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