| 摘要 |
<p>The structure (111) has a stack of layers forming a visible pass and infrared cut off filter (112) and an infrared pass and visible cut off filter to pass wavelengths of spectral bands, and comprising silicon nitride layers (116, 120, 124, 128, 132) and silicon dioxide layer (122) common to the filters. A copper layer (118) is arranged common to the filters, and another copper layer (126) is arranged only in one of the filters. The silicon dioxide layer includes the filters having different thicknesses, where the nitride layer is arranged only in one of the filters. Independent claims are also included for the following: (1) a photodetector and/or photoemitter device (2) a method for forming an optical filtering structure.</p> |
