| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial silicon wafer which can successfully prevent wafer warpage in a semiconductor device manufacturing process including millisecond annealing without requiring a special heat treatment for eliminating oxygen deposits in a wafer manufacturing stage.SOLUTION: In an epitaxial silicon wafer served to a semiconductor device manufacturing process, the device manufacturing process includes millisecond annealing of instantaneously heating a silicon wafer surface layer to 1250°C and over. The epitaxial silicon wafer after being subjected to a thermal process at a stage prior to the millisecond annealing has a deposition amount of oxygen deposits by the thermal process is 3×10atoms/cm(Old-ASTM) and under, and a product of density and volume of the oxygen deposits which are measured by a 90° light-scattering method is 3.0×10and under. |
