发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor memory device includes a string of memory cell transistors that are connected to each other in series. A selection transistor is connected between one end of the string of the memory cell transistors and one of a source line and a bit line. A line is selectively connected to a gate electrode of the selection transistor, a driver, or a node that supplies an unselected voltage, or is set to be in a floating state.
申请公布号 US2014247658(A1) 申请公布日期 2014.09.04
申请号 US201314014026 申请日期 2013.08.29
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HOSONO Koji
分类号 G11C16/24;G11C16/04 主分类号 G11C16/24
代理机构 代理人
主权项 1. A semiconductor memory device comprising: a string of memory cell transistors that are connected to each other in series; a first selection transistor that is connected between a first end of the string of the memory cell transistors and a source line, a gate of the first selection transistor being connected to a first line; and a second selection transistor that is connected between a second end of the string of the memory cell transistors and a bit line, a gate of the second selection transistor being connected to a second line, a driver configured to generate selected and unselected voltages for the first and second transistors; and transfer transistors between the driver and the first and second selection transistors, the transfer transistors being controllable to set at least one of the first and second lines to be in a floating state.
地址 Tokyo JP
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