| 发明名称 |
CLAMP ELEMENTS, MEMORIES, AND APPARATUSES FOR MEMORIES AND METHODS FOR FORMING THE SAME |
| 摘要 |
Clamp elements, memories, apparatuses, and methods for forming the same are disclosed herein. An example memory may include an array of memory cells and a plurality of clamp elements. A clamp element of the plurality of clamp elements may include a cell structure formed non-orthogonally relative to at least one of a bit line or a word line of the array of memory cells and may be configured to control a voltage of a respective bit line. |
| 申请公布号 |
US2014247654(A1) |
申请公布日期 |
2014.09.04 |
| 申请号 |
US201313783884 |
申请日期 |
2013.03.04 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
Rigano Antonino;Pellizzer Fabio |
| 分类号 |
G11C13/02;H01L45/00 |
主分类号 |
G11C13/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory comprising:
an array of memory cells; and a plurality of clamp elements, a clamp element of the plurality of clamp elements including a cell structure formed non-orthogonally relative to at least one of a bit line or a word line of the array of memory cells and configured to control a voltage of a respective bit line. |
| 地址 |
Boise ID US |
