ELECTRIC FIELD ASSISTED MRAM AND METHOD FOR USING THE SAME

摘要

The present invention is directed to a spin transfer torque magnetic random access memory (STT-MRAM) device having a plurality of memory elements. Each of the plurality of memory elements comprises a magnetic reference layer with a first invariable magnetization direction substantially perpendicular to layer plane thereof; a magnetic free layer separated from the magnetic reference layer by an insulating tunnel junction layer with the magnetic free layer having a variable magnetization direction substantially perpendicular to layer plane thereof; a dielectric layer formed in contact with the magnetic free layer opposite the insulating tunnel junction layer; and a first conductive layer formed in contact with the dielectric layer opposite the magnetic free layer.

主权项

1. A spin transfer torque magnetic random access memory (STT-MRAM) device including a plurality of memory elements, each of said plurality of memory elements comprising:
a magnetic reference layer with a first invariable magnetization direction substantially perpendicular to layer plane thereof; a magnetic free layer separated from said magnetic reference layer by an insulating tunnel junction layer, said magnetic free layer having a variable magnetization direction substantially perpendicular to layer plane thereof; a dielectric layer formed in contact with said magnetic free layer opposite said insulating tunnel junction layer; and a first conductive layer formed in contact with said dielectric layer opposite said magnetic free layer.