| 发明名称 |
NONVOLATILE MEMORY DEVICE HAVING MULTIPLE READ CIRCUITS AND USING VARIABLE RESISTIVE MATERIALS |
| 摘要 |
A nonvolatile memory device includes a memory array having multiple nonvolatile memory cells, a first read circuit and a second read circuit. The first read circuit is configured to read first data from the memory array during a first read operation and to provide one or more protection signals indicating a victim period during the first read operation. The second read circuit is configured to read second data from the memory array during a second read operation and to provide one or more check signals indicating an aggressor period during the second read operation. |
| 申请公布号 |
US2014247646(A1) |
申请公布日期 |
2014.09.04 |
| 申请号 |
US201414171873 |
申请日期 |
2014.02.04 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWON Hyo-Jin;CHUNG Hoi-Ju;KIM Chae-Hoon;KWON Yong-Jin;PARK Eun-Hye;LEE Yong-Jun |
| 分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nonvolatile memory device, comprising:
a memory array including a plurality of nonvolatile memory cells; a first read circuit configured to read first data from the memory array during a first read operation and to provide one or more protection signals indicating a victim period during the first read operation; and a second read circuit configured to read second data from the memory array during a second read operation and to provide one or more check signals indicating an aggressor period during the second read operation. |
| 地址 |
Suwon-si KR |
