METAL-OXIDE-METAL CAPACITOR

摘要

Provided is a capacitor of a semiconductor device. The capacitor can includes a plurality of parallel lower conductive lines in parallel and a plurality of upper conductive lines on the lower conductive lines. Each lower conductive line can have a line width that is different than that of the upper conductive line adjacent to it.

主权项

1. A metal-oxide-metal (MOM) capacitor, comprising:
a plurality of lower conductive lines formed in parallel with one another at a first horizontal level; and a plurality of upper conductive lines formed in parallel with one another at a second horizontal level and vertically on the lower conductive lines; wherein each lower conductive line has a line width that is different from that of the upper conductive line adjacent to it; wherein each upper conductive line has a line width that is different from that of the lower conductive line adjacent to it; wherein a line width of each conductive line is different from that of any adjacent conductive line at the same horizontal level; and wherein each conductive line is not directly connected with any adjacent conductive line.