| 摘要 |
A semiconductor device includes a first free layer having a magnetic direction that changes according to a direction and an amount of a first current, a first tunnel insulating layer arranged on the first free layer, a pinned layer, arranged on the first tunnel insulating layer, having a magnetic direction set to a first direction, a second tunnel insulating layer arranged on the pinned layer, and a second free layer, arranged on the second tunnel insulating layer, having a magnetic direction that changes according to a direction and an amount of a second current. |
