SEMICONDUCTOR DEVICE

摘要

A semiconductor device including: a first conductivity type n-type drift layer; a second conductivity type VLD region which is formed on a chip inner circumferential side of a termination structure region provided on one principal surface of the n-type drift layer and which is higher in concentration than the n-type drift layer; a second conductivity type first clip layer which is formed on a chip outer circumferential side of the VLD region so as to be separated from the VLD region and which is higher in concentration than the n-type drift layer; and a first conductivity type channel stopper layer which is formed on a chip outer circumferential side of the first clip layer so as to be separated from the first clip layer and which is higher in concentration than the n-type drift layer. Thus, it is possible to provide a semiconductor device having a stable and high breakdown voltage termination structure in which the length of a termination structure region is small as well as the immunity to the influence of external charge is high.

主权项

1. A semiconductor device comprising:
a first electrode formed on a first principal surface of a first conductivity type semiconductor substrate; a second electrode formed on a second principal surface of the semiconductor substrate; a base layer of a second conductivity type formed on the first principal surface of the semiconductor substrate so as to be connected to the first electrode; a VLD region of the second conductivity type provided on an outer circumferential side of the base layer; a plurality of floating regions of the second conductivity type provided on an outer circumferential side of the VLD region so as to be separated from the VLD region; and a stopper layer of the first or second conductivity type provided on an outer circumferential side of the VLD region so as to be separated from the VLD region.