| 发明名称 |
MEMORY DEVICE AND APPARATUS INCLUDING THE SAME |
| 摘要 |
A memory device may include a first electrode and a second electrode spaced apart from the first electrode. The memory device may further include a memory element disposed between the first electrode and the second electrode and a switching element disposed between the first electrode and the second electrode. The switching element may be configured to control signal access to the memory element. The memory device may further include a barrier layer disposed between the memory element and the switching element, the barrier layer including an insulation material. |
| 申请公布号 |
US2014246643(A1) |
申请公布日期 |
2014.09.04 |
| 申请号 |
US201414192371 |
申请日期 |
2014.02.27 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
KIM Young-bae;KIM Kyung-min;KIM Sung-ho;LEE Seung-ryul;CHANG Man;CHO Eun-ju;KIM Sae-jin;KIM Chang-jung |
| 分类号 |
H01L27/24 |
主分类号 |
H01L27/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory device, comprising:
a first electrode; a second electrode spaced apart from the first electrode; a memory element disposed between the first electrode and the second electrode; a switching element disposed between the first electrode and the second electrode, and the switching element being configured to control signal access to the memory element; and a barrier layer disposed between the memory element and the switching element, the barrier layer including an insulation material. |
| 地址 |
Suwon-Si KR |
