Electrically controlled light attenuator for laser annealing of targeted prosecuting missile, has upper and lower layers of doped semiconductor material that are switched when electric voltage is applied by inducing charge carriers

摘要

The attenuator (30) has a layer stack (10) with an upper layer (12) of doped semiconductor material, an insulating layer (16) and a lower layer (20) of doped semiconductor material. The upper and lower layers of doped semiconductor material are switched when electric voltage is applied by inducing charge carriers from transmissive state in which the charge carriers are transparent to radiation in predetermined wavelength range and absorptive state in which the charge carriers absorb radiation of specific wavelength range. The semiconductor material is silicon.